SECURITIES AND EXCHANGE COMMISSION
Washington, D.C. 20549
FORM 6-K
REPORT OF FOREIGN ISSUER
Pursuant to Rule 13a-16 or 15d-16 of
the Securities Exchange Act of 1934
For the month of July 2004
Commission File Number 1-31994
SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION
(Translation of Registrant's Name Into English)
18 Zhangjiang Road
Pudong New Area, Shanghai 201203
People's Republic of China
(Address of Principal Executive Offices)
(Indicate by check mark whether the registrant files or will file annual
reports under cover of Form 20-F or Form 40-F):
Form 20-F [X] Form 40-F
(Indicate by check mark if the registrant is submitting the Form 6-K in
paper as permitted by Regulation S-T Rule 101(b)(1)):
Yes [ ] No [X]
(Indicate by check mark if the registrant is submitting the Form 6-K in
paper as permitted by Regulation S-T Rule 101(b)(7)):
Yes [ ] No [X]
(Indicate by check mark whether the registrant by furnishing the
information contained in this Form is also thereby furnishing the information to
the Commission pursuant to Rule 12g3-2(b) under the Securities Exchange Act of
1934):
Yes [ ] No [X]
(If "Yes" is marked, indicate below the file number assigned to the
registrant in connection with Rule 12g3-2(b): 82-____)
Semiconductor Manufacturing International Corporation (the "Registrant") is
furnishing under the cover of Form 6-K:
Exhibit 99.1: Press announcement dated July 23, 2004 relating to the appointment
of Mr. Sean Hunkler as non-executive director of the Registrant.
Exhibit 99.2: Press release dated July 28, 2004 relating to verification of
MoSys' ultra-high reliability IT-SRAM-R technology on the
Registrant's 0.13 micron logic process.
SIGNATURE
Pursuant to the requirements of the Securities Exchange Act of 1934, the
registrant has duly caused this report to be signed on its behalf by the
undersigned, thereunto duly authorized.
Semiconductor Manufacturing
International Corporation
By: /s/ Richard R. Chang
--------------------------------------
Name: Richard R. Chang
Title: Chairman of the Board,
President and Chief Executive Officer
Date: July 28, 2004
EXHIBIT INDEX
Exhibit Description
------- -----------
Exhibit 99.1: Press announcement dated July 23, 2004 relating to the
appointment of Mr. Sean Hunkler as non-executive director of
the Registrant.
Exhibit 99.2: Press release dated July 28, 2004 relating to verification of
MoSys' ultra-high reliability IT-SRAM-R technology on the
Registrant's 0.13 micron logic process.
EXHIBIT 99.1
[SMIC LOGO]
SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION
[Company Name in Chinese]
(Incorporated in the Cayman Islands with limited liability)
(STOCK CODE: 0981)
SMIC APPOINTS NON-EXECUTIVE DIRECTOR
SMIC appoints Non-Executive Director
The Company is pleased to announce that Mr. Sean Hunkler has been appointed as
Non-Executive Director of the Company effective from 25 April 2004.
Mr. Hunkler, 42, is the vice president of Fab Operations for Freescale
Semiconductor Inc, a subsidiary of Motorola, Inc, a shareholder of our Company.
Mr. Hunkler worked in Hong Kong and managed liaison between the businesses and
manufacturing sites in the Asia Pacific region. He also served as president of
Motorola's White Oak joint venture with Infineon Technologies in Richmond,
Virginia. During this time Mr. Hunkler also oversaw the SC300 joint venture in
Dresden, Germany. Mr. Hunkler received his bachelor's degree in chemical
engineering from Johns Hopkins University, and his master's degree in business
administration from the University of Texas at Austin.
Mr. Hunkler will serve as a Class I Director of the Company, which means that he
will serve for an initial term that will terminate on the date that is one year
from the date on which dealings in the Company's shares commenced on The Stock
Exchange of Hong Kong Limited, namely from 18 March 2004. After this period, he
will, together with other Class I Directors, be eligible for re-election for a
term of 3 years.
Mr. Hunkler is not connected with any directors, senior management or
substantial or controlling shareholders of the Company, nor is he interested in
shares of the Company within the meaning of Part XV of the Securities and
Futures Ordinance.
As at the date of this announcement, the directors of the Company are Richard R.
Chang, Lai Xing Cai, Ta-Lin Hsu, Sean Hunkler, Yen-Pong Jou, Tsuyoshi Kawanishi,
Henry Shaw, Lip-Bu Tan and Yang Yuan Wang.
Semiconductor Manufacturing International Corporation
Richard R. Chang
Chairman
Hong Kong, 23, July 2004
* for identification only.
EXHIBIT 99.2
[LOGO OF MOSYS] [LOGO OF SMIC]
K.T. Boyle Sarina Huang
MoSys, Public Relations SMIC Public Relations
Sunnyvale, CA Shanghai, China
+1 (408) 731-1830 +86 21 5080 2000 x 10356
kboyle@mosys.com Sarina_Huang@smics.com
MOSYS' ULTRA-HIGH RELIABILITY 1T-SRAM-R TECHNOLOGY
VERIFIED ON SMIC 0.13-MICRON LOGIC PROCESS
Customers benefit from Transparent Error Correction for increasing density,
quality, and elimination of laser repair
SUNNYVALE, Calif., and SHANGHAI, China, July 28th, 2004 - MoSys, Inc. (NASDAQ:
MOSY), the industry's leading provider of high density embedded memory
solutions, and Semiconductor Manufacturing International Corporation (SMIC;
NYSE: SMI; HKSE: 981), one of the leading semiconductor foundries in the world,
announced that MoSys' 1T-SRAM-R(R) technology incorporating Transparent Error
Correction(TM) (TEC) is silicon-proven in SMIC's 0.13 micron logic process. This
extends the existing cooperation between the companies as an additional
optimized high-density memory solution is now available to SMIC's foundry
customers.
"SMIC's silicon verification of MoSys' 0.13um high density, 1T-SRAM-R memory
gives our customers access to exceptional memory technology that has been
verified on two of SMIC's standard logic processes: 0.18, and now, 0.13 micron,"
stated James Sung, vice president of sales and marketing at SMIC. "Both
1T-SRAM-R offerings not only help our customers realize additional product cost
savings through TEC; they also significantly reduce design risk and enhance our
customer's ability to create complex SoC designs using MoSys' unique memory
architecture."
"Our 1T-SRAM-R embedded memory technology continues to demonstrate its
exceptional scalability and portability, while improving yields, Soft Error Rate
(SER) and reliability through built-in Transparent Error Correction," commented
Fu-Chieh Hsu, president and CEO of MoSys. "MoSys' 1T-SRAM-R memory, which has
been silicon-verified with very high yields on SMIC's logic process, provides
their customers with access to high-density 0.13-micron memory technology and
delivers the added benefit of simplifying production flow by eliminating laser
repair."
ABOUT SMIC
SMIC is one of the leading semiconductor foundries in the world. As a foundry,
SMIC provides integrated circuit (IC) manufacturing at 0.35-micron to
0.13-micron technologies. Established in April 2000, SMIC, a Cayman Islands
company, operates three 8-inch wafer fabrication facilities in the Zhangjiang
High-Tech Park in Shanghai, and an 8-inch wafer fabrication facility in Tianjin,
China. In addition, SMIC is currently constructing 12-inch wafer fabrication
facilities in Beijing, China. SMIC's Fab 1 was named one of two "Top Fabs of the
Year 2003" by Semiconductor International, a leading industry publication in May
2003. In addition to IC manufacturing, SMIC provides customers with a full range
of services, including design services, mask manufacturing and wafer probe test.
For more information, please visit www.smics.com.
ABOUT MOSYS
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative
memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies
offer a combination of high density, low power consumption, high speed and low
cost unmatched by other available memory technologies.
The single transistor bit cell used in 1T-SRAM memory results in the technology
achieving much higher density than traditional four or six transistor SRAMs,
while using the same standard logic manufacturing processes.1T-SRAM technologies
also offer the familiar, refresh-free interface and high performance for random
address access cycles associated with traditional SRAMs.
In addition, these technologies can reduce power consumption by a factor of four
compared with traditional SRAM technology, contributing to making it ideal for
embedding large memories in System on Chip (SoC) designs. MoSys' licensees have
shipped more than 50 million chips incorporating 1T-SRAM embedded memories,
demonstrating the excellent manufacturability of the technology in a wide range
of silicon processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on MoSys'
website at http://www.mosys.com.
1T-SRAM(R)is a MoSys trademark registered in the U.S. Patent and Trademark
Office. All other trade, product, or service names referenced in this release
may be trademarks or registered trademarks of their respective holders.